Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin D2PAK IPB015N04NGATMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ 3
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0015 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
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€ 1 700,00
€ 1,70 Katrs (Rulli ir 1000) (bez PVN)
€ 2 057,00
€ 2,057 Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
€ 1 700,00
€ 1,70 Katrs (Rulli ir 1000) (bez PVN)
€ 2 057,00
€ 2,057 Katrs (Rulli ir 1000) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
1000
Noliktavas stāvoklis patreiz nav pieejams
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ 3
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0015 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products