Infineon OptiMOS™ 3 N-Channel MOSFET, 37 A, 150 V, 3-Pin TO-220 FP IPA105N15N3GXKSA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™ 3
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11.1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
40.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.85mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.65mm
Typical Gate Charge @ Vgs
41 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16.15mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Produkta apraksts
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 91,00
€ 4,55 Katrs (tiek piegadats Tubina) (bez PVN)
€ 110,11
€ 5,506 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
20
€ 91,00
€ 4,55 Katrs (tiek piegadats Tubina) (bez PVN)
€ 110,11
€ 5,506 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Penālis)
20
Noliktavas stāvoklis patreiz nav pieejams
| Daudzums | Vienības cena | Per Penālis |
|---|---|---|
| 20 - 36 | € 4,55 | € 18,20 |
| 40 - 96 | € 4,35 | € 17,40 |
| 100 - 196 | € 4,15 | € 16,60 |
| 200+ | € 3,85 | € 15,40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™ 3
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11.1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
40.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.85mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.65mm
Typical Gate Charge @ Vgs
41 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16.15mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Produkta apraksts
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products