Infineon OptiMOS P P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 BSS223PWH6327XTSA1

Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
20 V
Series
OptiMOS P
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Number of Elements per Chip
1
Length
2mm
Typical Gate Charge @ Vgs
0.5 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.25mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.33V
Automotive Standard
AEC-Q101
Height
0.8mm
Produkta apraksts
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 43,50
€ 0,087 Katrs (Rulli ir 500) (bez PVN)
€ 52,64
€ 0,105 Katrs (Rulli ir 500) (Ieskaitot PVN)
500
€ 43,50
€ 0,087 Katrs (Rulli ir 500) (bez PVN)
€ 52,64
€ 0,105 Katrs (Rulli ir 500) (Ieskaitot PVN)
500
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Rullis |
---|---|---|
500 - 500 | € 0,087 | € 43,50 |
1000 - 2000 | € 0,083 | € 41,50 |
2500 - 4500 | € 0,079 | € 39,50 |
5000 - 12000 | € 0,074 | € 37,00 |
12500+ | € 0,07 | € 35,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
20 V
Series
OptiMOS P
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Number of Elements per Chip
1
Length
2mm
Typical Gate Charge @ Vgs
0.5 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.25mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.33V
Automotive Standard
AEC-Q101
Height
0.8mm
Produkta apraksts
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.