Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
4.1 V
Package Type
SOT-343
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
4.8 V
Maximum Emitter Base Voltage
0.5 V
Maximum Operating Frequency
45 GHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.9mm
Produkta apraksts
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineons silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
€ 12,88
€ 0,515 Katrs (Paka ir 25) (bez PVN)
€ 15,58
€ 0,623 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
€ 12,88
€ 0,515 Katrs (Paka ir 25) (bez PVN)
€ 15,58
€ 0,623 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
25 - 225 | € 0,515 | € 12,88 |
250 - 600 | € 0,387 | € 9,68 |
625 - 1225 | € 0,361 | € 9,02 |
1250 - 2475 | € 0,335 | € 8,38 |
2500+ | € 0,309 | € 7,72 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
4.1 V
Package Type
SOT-343
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
4.8 V
Maximum Emitter Base Voltage
0.5 V
Maximum Operating Frequency
45 GHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.9mm
Produkta apraksts
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineons silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.