Infineon AIM SiC N-Channel MOSFET, 32 A, 750 V, 4-Pin PG-TO247-4 AIMZA75R060M1HXKSA1

RS noliktavas nr.: 348-944Ražotājs: InfineonRažotāja kods: AIMZA75R060M1HXKSA1
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

750 V

Package Type

PG-TO247-4

Series

AIM

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

€ 11,00

€ 11,00 Katrs (bez PVN)

€ 13,31

€ 13,31 Katrs (Ieskaitot PVN)

Infineon AIM SiC N-Channel MOSFET, 32 A, 750 V, 4-Pin PG-TO247-4 AIMZA75R060M1HXKSA1

€ 11,00

€ 11,00 Katrs (bez PVN)

€ 13,31

€ 13,31 Katrs (Ieskaitot PVN)

Infineon AIM SiC N-Channel MOSFET, 32 A, 750 V, 4-Pin PG-TO247-4 AIMZA75R060M1HXKSA1
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

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10 - 99€ 9,90
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1000+€ 7,60

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

750 V

Package Type

PG-TO247-4

Series

AIM

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more