Diodes Inc N-Channel MOSFET, 450 mA, 60 V, 3-Pin E-Line ZVN2106A

RS noliktavas nr.: 263-857Ražotājs: DiodesZetexRažotāja kods: ZVN2106A
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

450 mA

Maximum Drain Source Voltage

60 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

2.41mm

Number of Elements per Chip

1

Length

4.77mm

Maximum Operating Temperature

+150 °C

Height

4.01mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

€ 3,11

€ 0,622 Katrs (Paka ir 5) (bez PVN)

€ 3,76

€ 0,753 Katrs (Paka ir 5) (Ieskaitot PVN)

Diodes Inc N-Channel MOSFET, 450 mA, 60 V, 3-Pin E-Line ZVN2106A
Izvēlēties iepakojuma veidu

€ 3,11

€ 0,622 Katrs (Paka ir 5) (bez PVN)

€ 3,76

€ 0,753 Katrs (Paka ir 5) (Ieskaitot PVN)

Diodes Inc N-Channel MOSFET, 450 mA, 60 V, 3-Pin E-Line ZVN2106A
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
5 - 45€ 0,622€ 3,11
50 - 195€ 0,414€ 2,07
200 - 995€ 0,343€ 1,72
1000 - 1995€ 0,303€ 1,52
2000+€ 0,264€ 1,32

Ideate. Create. Collaborate

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No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

450 mA

Maximum Drain Source Voltage

60 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

2.41mm

Number of Elements per Chip

1

Length

4.77mm

Maximum Operating Temperature

+150 °C

Height

4.01mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more