Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
3.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
6.2mm
Length
6.7mm
Typical Gate Charge @ Vgs
47.5 nC @ 5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
2.39mm
Izcelsmes valsts
Taiwan, Province Of China
Produkta apraksts
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 827,50
€ 0,331 Katrs (Rulli ir 2500) (bez PVN)
€ 1 001,28
€ 0,401 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 827,50
€ 0,331 Katrs (Rulli ir 2500) (bez PVN)
€ 1 001,28
€ 0,401 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
3.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
6.2mm
Length
6.7mm
Typical Gate Charge @ Vgs
47.5 nC @ 5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
2.39mm
Izcelsmes valsts
Taiwan, Province Of China
Produkta apraksts