Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
6.4 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
780 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Length
3mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
15.6 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Height
1.1mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 5,10
€ 0,102 Katrs (Paka ir 50) (bez PVN)
€ 6,17
€ 0,123 Katrs (Paka ir 50) (Ieskaitot PVN)
Standarts
50
€ 5,10
€ 0,102 Katrs (Paka ir 50) (bez PVN)
€ 6,17
€ 0,123 Katrs (Paka ir 50) (Ieskaitot PVN)
Standarts
50
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Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
6.4 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
780 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Length
3mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
15.6 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Height
1.1mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts