Vishay TrenchFET Dual N-Channel MOSFET, 69.3 A, 30 V, 8-Pin PowerPAIR 3 x 3S SiZ340BDT-T1-GE3

RS noliktavas nr.: 228-2938Ražotājs: VishayRažotāja kods: SiZ340BDT-T1-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

69.3 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 3 x 3S

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.00856 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Transistor Material

Si

Number of Elements per Chip

2

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Noliktavas stāvoklis patreiz nav pieejams

€ 957,00

€ 0,319 Katrs (Rulli ir 3000) (bez PVN)

€ 1 157,97

€ 0,386 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Vishay TrenchFET Dual N-Channel MOSFET, 69.3 A, 30 V, 8-Pin PowerPAIR 3 x 3S SiZ340BDT-T1-GE3

€ 957,00

€ 0,319 Katrs (Rulli ir 3000) (bez PVN)

€ 1 157,97

€ 0,386 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Vishay TrenchFET Dual N-Channel MOSFET, 69.3 A, 30 V, 8-Pin PowerPAIR 3 x 3S SiZ340BDT-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

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design-spark
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

69.3 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 3 x 3S

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.00856 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Transistor Material

Si

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more