Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.85V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
0.71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
3.5 nC @ 4.5 V
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,442
Katrs (Paka ir 25) (bez PVN)
€ 0,535
Katrs (Paka ir 25) (Ieskaitot PVN)
25
€ 0,442
Katrs (Paka ir 25) (bez PVN)
€ 0,535
Katrs (Paka ir 25) (Ieskaitot PVN)
25
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
25 - 225 | € 0,442 | € 11,05 |
250 - 600 | € 0,416 | € 10,40 |
625 - 1225 | € 0,376 | € 9,40 |
1250 - 2475 | € 0,354 | € 8,85 |
2500+ | € 0,332 | € 8,30 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.85V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
0.71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
3.5 nC @ 4.5 V
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V