Vishay P-Channel MOSFET, 5.6 A, 100 V, 3-Pin DPAK IRFR9120TRPBF

RS noliktavas nr.: 812-0648Ražotājs: VishayRažotāja kods: IRFR9120TRPBF
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Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

5.6 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Width

6.22mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 8,60

€ 0,86 Katrs (Paka ir 10) (bez PVN)

€ 10,41

€ 1,041 Katrs (Paka ir 10) (Ieskaitot PVN)

Vishay P-Channel MOSFET, 5.6 A, 100 V, 3-Pin DPAK IRFR9120TRPBF
Izvēlēties iepakojuma veidu

€ 8,60

€ 0,86 Katrs (Paka ir 10) (bez PVN)

€ 10,41

€ 1,041 Katrs (Paka ir 10) (Ieskaitot PVN)

Vishay P-Channel MOSFET, 5.6 A, 100 V, 3-Pin DPAK IRFR9120TRPBF

Noliktavas stāvoklis patreiz nav pieejams

Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

5.6 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Width

6.22mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more