Vishay N-Channel MOSFET, 2.6 A, 200 V, 3-Pin DPAK IRFR210TRPBF
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2V
Izcelsmes valsts
Malaysia
Produkta apraksts
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 57,00
€ 0,57 Katrs (tiek piegadats Rulli) (bez PVN)
€ 68,97
€ 0,69 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
€ 57,00
€ 0,57 Katrs (tiek piegadats Rulli) (bez PVN)
€ 68,97
€ 0,69 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 100 - 240 | € 0,57 | € 5,70 |
| 250 - 490 | € 0,525 | € 5,25 |
| 500 - 990 | € 0,495 | € 4,95 |
| 1000+ | € 0,412 | € 4,12 |
Ideate. Create. Collaborate
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No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2V
Izcelsmes valsts
Malaysia
Produkta apraksts
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products