N-Channel MOSFET Transistor, 50 A, 60 V, 5-Pin TO-220 Vishay IRCZ44PBF

RS noliktavas nr.: 541-1556Ražotājs: VishayRažotāja kods: IRCZ44PBF
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Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

5

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

150 W

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

4.83mm

Typical Gate Charge @ Vgs

95 nC @ 10 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

9.02mm

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N-Channel MOSFET Transistor, 50 A, 60 V, 5-Pin TO-220 Vishay IRCZ44PBF

P.O.A.

N-Channel MOSFET Transistor, 50 A, 60 V, 5-Pin TO-220 Vishay IRCZ44PBF
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

5

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

150 W

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

4.83mm

Typical Gate Charge @ Vgs

95 nC @ 10 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

9.02mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt