Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
126 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
49 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Izcelsmes valsts
China
Produkta apraksts
MOSFET Transistors, Toshiba
€ 5,75
€ 1,15 Katrs (Paka ir 5) (bez PVN)
€ 6,96
€ 1,392 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 5,75
€ 1,15 Katrs (Paka ir 5) (bez PVN)
€ 6,96
€ 1,392 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
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Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
126 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
49 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Izcelsmes valsts
China
Produkta apraksts