Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W,S1VF(S

RS noliktavas nr.: 891-2945Ražotājs: ToshibaRažotāja kods: TK20N60W,S1VF(S
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Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.02mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.94mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.95mm

Forward Diode Voltage

1.7V

Izcelsmes valsts

China

Produkta apraksts

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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Noliktavas stāvoklis patreiz nav pieejams

€ 4,30

€ 2,15 Katrs (Paka ir 2) (bez PVN)

€ 5,20

€ 2,602 Katrs (Paka ir 2) (Ieskaitot PVN)

Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W,S1VF(S

€ 4,30

€ 2,15 Katrs (Paka ir 2) (bez PVN)

€ 5,20

€ 2,602 Katrs (Paka ir 2) (Ieskaitot PVN)

Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W,S1VF(S
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

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DaudzumsVienības cenaPer Iepakojums
2 - 8€ 2,15€ 4,30
10 - 38€ 1,90€ 3,80
40 - 98€ 1,65€ 3,30
100 - 198€ 1,55€ 3,10
200+€ 1,45€ 2,90

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Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.02mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.94mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.95mm

Forward Diode Voltage

1.7V

Izcelsmes valsts

China

Produkta apraksts

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more