Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.04mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
2 nC @ 0 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
0.64mm
Height
0.35mm
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Izcelsmes valsts
Philippines
Produkta apraksts
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,032
Katrs (Rulli ir 250) (bez PVN)
€ 0,039
Katrs (Rulli ir 250) (Ieskaitot PVN)
250
€ 0,032
Katrs (Rulli ir 250) (bez PVN)
€ 0,039
Katrs (Rulli ir 250) (Ieskaitot PVN)
250
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.04mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
2 nC @ 0 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
0.64mm
Height
0.35mm
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Izcelsmes valsts
Philippines
Produkta apraksts