Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
192 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
3.99 nC @ 4.5 V
Width
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,313
Katrs (Paka ir 50) (bez PVN)
€ 0,379
Katrs (Paka ir 50) (Ieskaitot PVN)
50
€ 0,313
Katrs (Paka ir 50) (bez PVN)
€ 0,379
Katrs (Paka ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
50 - 200 | € 0,313 | € 15,65 |
250 - 450 | € 0,304 | € 15,20 |
500 - 950 | € 0,297 | € 14,85 |
1000+ | € 0,29 | € 14,50 |
Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
192 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
3.99 nC @ 4.5 V
Width
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1.05mm
Minimum Operating Temperature
-55 °C