Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
20 V
Series
RU1C001ZP
Package Type
SC-85
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
40 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
10 V
Width
1.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.1mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
Thailand
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,067
Katrs (Paka ir 200) (bez PVN)
€ 0,081
Katrs (Paka ir 200) (Ieskaitot PVN)
200
€ 0,067
Katrs (Paka ir 200) (bez PVN)
€ 0,081
Katrs (Paka ir 200) (Ieskaitot PVN)
200
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
200 - 200 | € 0,067 | € 13,40 |
400 - 400 | € 0,06 | € 12,00 |
600 - 800 | € 0,055 | € 11,00 |
1000 - 1800 | € 0,05 | € 10,00 |
2000+ | € 0,046 | € 9,20 |
Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
20 V
Series
RU1C001ZP
Package Type
SC-85
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
40 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
10 V
Width
1.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.1mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
Thailand