Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
100 V
Package Type
SOT-93
Mounting Type
Through Hole
Maximum Power Dissipation
125 W
Minimum DC Current Gain
15
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Maximum Operating Temperature
+150 °C
Base Current
5A
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,75
Katrs (Tubina ir 30) (bez PVN)
€ 3,328
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 2,75
Katrs (Tubina ir 30) (bez PVN)
€ 3,328
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
30 - 90 | € 2,75 | € 82,50 |
120 - 480 | € 2,25 | € 67,50 |
510 - 990 | € 1,90 | € 57,00 |
1020+ | € 1,75 | € 52,50 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
100 V
Package Type
SOT-93
Mounting Type
Through Hole
Maximum Power Dissipation
125 W
Minimum DC Current Gain
15
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Maximum Operating Temperature
+150 °C
Base Current
5A
Izcelsmes valsts
China