Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.1mm
Typical Gate Charge @ Vgs
7.9 nC @ 10 V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
Malaysia
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,643
Katrs (Rulli ir 1500) (bez PVN)
€ 0,778
Katrs (Rulli ir 1500) (Ieskaitot PVN)
1500
€ 0,643
Katrs (Rulli ir 1500) (bez PVN)
€ 0,778
Katrs (Rulli ir 1500) (Ieskaitot PVN)
1500
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.1mm
Typical Gate Charge @ Vgs
7.9 nC @ 10 V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
Malaysia