Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
237 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
1.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
128 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.1mm
Typical Gate Charge @ Vgs
44 nC @ 4.5 V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
Malaysia
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,95
Katrs (Rulli ir 1500) (bez PVN)
€ 2,36
Katrs (Rulli ir 1500) (Ieskaitot PVN)
1500
€ 1,95
Katrs (Rulli ir 1500) (bez PVN)
€ 2,36
Katrs (Rulli ir 1500) (Ieskaitot PVN)
1500
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
237 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
1.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
128 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.1mm
Typical Gate Charge @ Vgs
44 nC @ 4.5 V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
Malaysia