onsemi NVD5C434N N-Channel MOSFET, 163 A, 40 V, 3-Pin DPAK NVD5C434NT4G
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
163 A
Maximum Drain Source Voltage
40 V
Series
NVD5C434N
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
80.6 nC @ 10 V
Automotive Standard
AEC-Q101
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.38mm
Produkta apraksts
N-Channel Power MOSFET, 40V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 3 875,00
€ 1,55 Katrs (Rulli ir 2500) (bez PVN)
€ 4 688,75
€ 1,876 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 3 875,00
€ 1,55 Katrs (Rulli ir 2500) (bez PVN)
€ 4 688,75
€ 1,876 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
163 A
Maximum Drain Source Voltage
40 V
Series
NVD5C434N
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
80.6 nC @ 10 V
Automotive Standard
AEC-Q101
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.38mm
Produkta apraksts
N-Channel Power MOSFET, 40V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products