Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Width
1.3mm
Minimum Operating Temperature
-55 °C
Height
1mm
Produkta apraksts
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,23
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,278
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
10
€ 0,23
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,278
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
10 - 240 | € 0,23 | € 2,30 |
250+ | € 0,195 | € 1,95 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Width
1.3mm
Minimum Operating Temperature
-55 °C
Height
1mm
Produkta apraksts