Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Width
3.7mm
Typical Gate Charge @ Vgs
22 nC @ 10 V dc
Maximum Operating Temperature
+175 °C
Length
6.7mm
Minimum Operating Temperature
-55 °C
Height
1.65mm
Produkta apraksts
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 5,40
€ 0,54 Katrs (Paka ir 10) (bez PVN)
€ 6,53
€ 0,653 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 5,40
€ 0,54 Katrs (Paka ir 10) (bez PVN)
€ 6,53
€ 0,653 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
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Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Width
3.7mm
Typical Gate Charge @ Vgs
22 nC @ 10 V dc
Maximum Operating Temperature
+175 °C
Length
6.7mm
Minimum Operating Temperature
-55 °C
Height
1.65mm
Produkta apraksts