Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Height
2.38mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Czech Republic
Produkta apraksts
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,557
Katrs (Rulli ir 2500) (bez PVN)
€ 0,674
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 0,557
Katrs (Rulli ir 2500) (bez PVN)
€ 0,674
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Height
2.38mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Czech Republic
Produkta apraksts