Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Maximum Power Dissipation
15 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.73 x 2.38 x 6.22mm
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,508
Katrs (Tubina ir 75) (bez PVN)
€ 0,615
Katrs (Tubina ir 75) (Ieskaitot PVN)
75
€ 0,508
Katrs (Tubina ir 75) (bez PVN)
€ 0,615
Katrs (Tubina ir 75) (Ieskaitot PVN)
75
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
75 - 75 | € 0,508 | € 38,10 |
150 - 450 | € 0,358 | € 26,85 |
525 - 975 | € 0,296 | € 22,20 |
1050+ | € 0,249 | € 18,68 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Maximum Power Dissipation
15 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.73 x 2.38 x 6.22mm