onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

RS noliktavas nr.: 181-1864Ražotājs: onsemiRažotāja kods: FGH75T65SQDNL4
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

5100pF

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 6,60

Katrs (Tubina ir 450) (bez PVN)

€ 7,986

Katrs (Tubina ir 450) (Ieskaitot PVN)

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

450

Pieejams komplektos pa 450
450€ 2 970,00
900€ 5 940,00
1350€ 8 910,00
1800€ 11 880,00
2250€ 14 850,00
2700€ 17 820,00
3150€ 20 790,00
3600€ 23 760,00
4050€ 26 730,00
4500€ 29 700,00
4950€ 32 670,00
5400€ 35 640,00
5850€ 38 610,00
6300€ 41 580,00
6750€ 44 550,00

€ 6,60

Katrs (Tubina ir 450) (bez PVN)

€ 7,986

Katrs (Tubina ir 450) (Ieskaitot PVN)

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole
Noliktavas stāvoklis patreiz nav pieejams

450

Pieejams komplektos pa 450
450€ 2 970,00
900€ 5 940,00
1350€ 8 910,00
1800€ 11 880,00
2250€ 14 850,00
2700€ 17 820,00
3150€ 20 790,00
3600€ 23 760,00
4050€ 26 730,00
4500€ 29 700,00
4950€ 32 670,00
5400€ 35 640,00
5850€ 38 610,00
6300€ 41 580,00
6750€ 44 550,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

5100pF

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more