Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
124 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
5mm
Length
5.85mm
Typical Gate Charge @ Vgs
42 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
1.05mm
Izcelsmes valsts
Philippines
€ 10,25
€ 2,05 Katrs (Paka ir 5) (bez PVN)
€ 12,40
€ 2,48 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 10,25
€ 2,05 Katrs (Paka ir 5) (bez PVN)
€ 12,40
€ 2,48 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
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Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
124 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
5mm
Length
5.85mm
Typical Gate Charge @ Vgs
42 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
1.05mm
Izcelsmes valsts
Philippines