Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
17 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-264
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
80
Transistor Configuration
Single
Maximum Collector Base Voltage
250 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
20 x 5 x 26mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 4,20
Katrs (Tubina ir 25) (bez PVN)
€ 5,082
Katrs (Tubina ir 25) (Ieskaitot PVN)
25
€ 4,20
Katrs (Tubina ir 25) (bez PVN)
€ 5,082
Katrs (Tubina ir 25) (Ieskaitot PVN)
25
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
25 - 100 | € 4,20 | € 105,00 |
125 - 225 | € 3,60 | € 90,00 |
250+ | € 3,50 | € 87,50 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
17 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-264
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
80
Transistor Configuration
Single
Maximum Collector Base Voltage
250 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
20 x 5 x 26mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.