Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
340 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.2mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Width
1.35mm
Number of Elements per Chip
1
Height
0.9mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,033
Katrs (Rulli ir 3000) (bez PVN)
€ 0,04
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,033
Katrs (Rulli ir 3000) (bez PVN)
€ 0,04
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
3000 - 3000 | € 0,033 | € 99,00 |
6000+ | € 0,032 | € 96,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
340 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.2mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Width
1.35mm
Number of Elements per Chip
1
Height
0.9mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts