Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3 + Tab
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Number of Elements per Chip
1
Width
4.7mm
Forward Diode Voltage
1.3V
Height
16.3mm
Minimum Operating Temperature
-55 °C
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,15
Katrs (Tubina ir 800) (bez PVN)
€ 2,602
Katrs (Tubina ir 800) (Ieskaitot PVN)
800
€ 2,15
Katrs (Tubina ir 800) (bez PVN)
€ 2,602
Katrs (Tubina ir 800) (Ieskaitot PVN)
800
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3 + Tab
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Number of Elements per Chip
1
Width
4.7mm
Forward Diode Voltage
1.3V
Height
16.3mm
Minimum Operating Temperature
-55 °C