Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
100mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
8 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
160pF
Source Gate On-Capacitance
160pF
Dimensions
5.2 x 4.19 x 5.33mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
5.2mm
Height
5.33mm
Width
4.19mm
Produkta apraksts
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,752
Katrs (Paka ir 20) (bez PVN)
€ 0,91
Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
€ 0,752
Katrs (Paka ir 20) (bez PVN)
€ 0,91
Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
20 - 80 | € 0,752 | € 15,04 |
100 - 180 | € 0,517 | € 10,34 |
200 - 980 | € 0,467 | € 9,34 |
1000 - 1980 | € 0,415 | € 8,30 |
2000+ | € 0,351 | € 7,02 |
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
100mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
8 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
160pF
Source Gate On-Capacitance
160pF
Dimensions
5.2 x 4.19 x 5.33mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
5.2mm
Height
5.33mm
Width
4.19mm
Produkta apraksts
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.