Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorMaximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
40 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.73 x 6.22 x 2.39mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Produkta apraksts
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,469
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,567
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
5
€ 0,469
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,567
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
5
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorMaximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
40 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.73 x 6.22 x 2.39mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Produkta apraksts
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.