Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
78 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
26 @ 10 V nC
Width
5.85mm
Number of Elements per Chip
2
Forward Diode Voltage
1.3V
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,30
Katrs (Paka ir 10) (bez PVN)
€ 1,573
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 1,30
Katrs (Paka ir 10) (bez PVN)
€ 1,573
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 90 | € 1,30 | € 13,00 |
100 - 490 | € 1,05 | € 10,50 |
500 - 990 | € 0,816 | € 8,16 |
1000 - 1490 | € 0,738 | € 7,38 |
1500+ | € 0,72 | € 7,20 |
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
78 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
26 @ 10 V nC
Width
5.85mm
Number of Elements per Chip
2
Forward Diode Voltage
1.3V
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Produkta apraksts