Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
211 A
Maximum Drain Source Voltage
30 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.09 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Width
5.85mm
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
102 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Produkta apraksts
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,297
Katrs (Rulli ir 3000) (bez PVN)
€ 0,359
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,297
Katrs (Rulli ir 3000) (bez PVN)
€ 0,359
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
211 A
Maximum Drain Source Voltage
30 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.09 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Width
5.85mm
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
102 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Produkta apraksts