Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
20 V
Package Type
ECH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
48 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Width
2.3mm
Transistor Material
Si
Height
0.9mm
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,363
Katrs (Paka ir 15) (bez PVN)
€ 0,439
Katrs (Paka ir 15) (Ieskaitot PVN)
15
€ 0,363
Katrs (Paka ir 15) (bez PVN)
€ 0,439
Katrs (Paka ir 15) (Ieskaitot PVN)
15
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
15 - 15 | € 0,363 | € 5,44 |
30 - 135 | € 0,359 | € 5,38 |
150 - 435 | € 0,352 | € 5,28 |
450 - 885 | € 0,35 | € 5,25 |
900+ | € 0,345 | € 5,18 |
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
20 V
Package Type
ECH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
48 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Width
2.3mm
Transistor Material
Si
Height
0.9mm