N-Channel MOSFET, 23 A, 100 V, 3-Pin TO-220AB NXP BUK9575-100A,127

RS noliktavas nr.: 484-2915Ražotājs: NXPRažotāja kods: BUK9575-100A,127
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Tehniskie dokumenti

Specifikācija

Brand

NXP

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

72 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

98 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.3mm

Width

4.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.4mm

Produkta apraksts

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,981

Katrs (Paka ir 5) (bez PVN)

€ 1,187

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 23 A, 100 V, 3-Pin TO-220AB NXP BUK9575-100A,127

€ 0,981

Katrs (Paka ir 5) (bez PVN)

€ 1,187

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 23 A, 100 V, 3-Pin TO-220AB NXP BUK9575-100A,127
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 5€ 0,981€ 4,90
10 - 20€ 0,888€ 4,44
25 - 45€ 0,867€ 4,34
50 - 95€ 0,835€ 4,18
100+€ 0,679€ 3,40

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Brand

NXP

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

72 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

98 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.3mm

Width

4.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.4mm

Produkta apraksts

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt