Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Width
1.4mm
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
7 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
€ 7,36
€ 0,368 Katrs (Paka ir 20) (bez PVN)
€ 8,91
€ 0,445 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
€ 7,36
€ 0,368 Katrs (Paka ir 20) (bez PVN)
€ 8,91
€ 0,445 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
20 - 20 | € 0,368 | € 7,36 |
40 - 80 | € 0,276 | € 5,52 |
100 - 180 | € 0,21 | € 4,20 |
200 - 380 | € 0,198 | € 3,96 |
400+ | € 0,195 | € 3,90 |
Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Width
1.4mm
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
7 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts