Tehniskie dokumenti
Specifikācija
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
330 mA
Maximum Drain Source Voltage
9 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Depletion
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +0.6 V
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Length
3.05mm
Width
1.75mm
Transistor Material
Si
Minimum Operating Temperature
-25 °C
Height
1.3mm
Produkta apraksts
LND01 N-Channel MOSFET Transistors
The Microchip LND01 is a low threshold, depletion mode (normally on) MOSFET transistor. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
MOSFET Transistors, Microchip
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,278
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,336
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
25
€ 0,278
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,336
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
25
Tehniskie dokumenti
Specifikācija
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
330 mA
Maximum Drain Source Voltage
9 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Depletion
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +0.6 V
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Length
3.05mm
Width
1.75mm
Transistor Material
Si
Minimum Operating Temperature
-25 °C
Height
1.3mm
Produkta apraksts
LND01 N-Channel MOSFET Transistors
The Microchip LND01 is a low threshold, depletion mode (normally on) MOSFET transistor. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.