Tehniskie dokumenti
Specifikācija
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
25 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
15 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.826mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.7mm
Maximum Operating Temperature
+150 °C
Height
16.51mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
€ 9,25
€ 1,85 Katrs (Paka ir 5) (bez PVN)
€ 11,19
€ 2,238 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 9,25
€ 1,85 Katrs (Paka ir 5) (bez PVN)
€ 11,19
€ 2,238 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 20 | € 1,85 | € 9,25 |
25 - 95 | € 1,80 | € 9,00 |
100+ | € 1,75 | € 8,75 |
Tehniskie dokumenti
Specifikācija
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
25 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
15 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.826mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.7mm
Maximum Operating Temperature
+150 °C
Height
16.51mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.