IXYS MII200-12A4 Series IGBT Module, 270 A 1200 V, 7-Pin Y3 DCB, Screw Mount

RS noliktavas nr.: 193-650Ražotājs: IXYSRažotāja kods: MII200-12A4
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Specifikācija

Brand

IXYS

Maximum Continuous Collector Current

270 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

Y3 DCB

Configuration

Series

Mounting Type

Screw Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

110 x 62 x 30mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Produkta apraksts

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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IXYS MII200-12A4 Series IGBT Module, 270 A 1200 V, 7-Pin Y3 DCB, Screw Mount

1

Pieejams komplektos pa 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

IXYS MII200-12A4 Series IGBT Module, 270 A 1200 V, 7-Pin Y3 DCB, Screw Mount
Noliktavas stāvoklis patreiz nav pieejams

1

Pieejams komplektos pa 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Brand

IXYS

Maximum Continuous Collector Current

270 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

Y3 DCB

Configuration

Series

Mounting Type

Screw Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

110 x 62 x 30mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Produkta apraksts

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt