Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
1000 V
Series
HiperFET
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
568 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
25.42mm
Length
38.23mm
Typical Gate Charge @ Vgs
267 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.6mm
Produkta apraksts
N-channel Power MOSFET, IXYS HiperFET™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
€ 468,00
€ 46,80 Katrs (Tubina ir 10) (bez PVN)
€ 566,28
€ 56,628 Katrs (Tubina ir 10) (Ieskaitot PVN)
10
€ 468,00
€ 46,80 Katrs (Tubina ir 10) (bez PVN)
€ 566,28
€ 56,628 Katrs (Tubina ir 10) (Ieskaitot PVN)
10
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Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
1000 V
Series
HiperFET
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
568 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
25.42mm
Length
38.23mm
Typical Gate Charge @ Vgs
267 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.6mm
Produkta apraksts
N-channel Power MOSFET, IXYS HiperFET™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS