Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
250 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
390 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
10.41mm
Typical Gate Charge @ Vgs
83 @ 10 V nC
Width
11.05mm
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Height
4.83mm
Series
HiperFET
Minimum Operating Temperature
-55 °C
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 10,20
Katrs (bez PVN)
€ 12,34
Katrs (Ieskaitot PVN)
1
€ 10,20
Katrs (bez PVN)
€ 12,34
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 4 | € 10,20 |
5 - 9 | € 8,70 |
10 - 24 | € 8,30 |
25+ | € 7,90 |
Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
250 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
390 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
10.41mm
Typical Gate Charge @ Vgs
83 @ 10 V nC
Width
11.05mm
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Height
4.83mm
Series
HiperFET
Minimum Operating Temperature
-55 °C