Tehniskie dokumenti
Specifikācija
Channel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Typical Gate Charge @ Vgs
7.2 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
1.5mm
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
P.O.A.
Standarts
5
P.O.A.
Standarts
5
Tehniskie dokumenti
Specifikācija
Channel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Typical Gate Charge @ Vgs
7.2 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
1.5mm