N-Channel MOSFET, 270 A, 60 V, 3-Pin D2PAK Infineon IRLS3036PBF

RS noliktavas nr.: 688-7263Ražotājs: InfineonRažotāja kods: IRLS3036PBF
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

270 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

380 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

91 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

9.65mm

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

4.83mm

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Noliktavas stāvoklis patreiz nav pieejams

€ 8,60

€ 4,30 Katrs (Paka ir 2) (bez PVN)

€ 10,41

€ 5,203 Katrs (Paka ir 2) (Ieskaitot PVN)

N-Channel MOSFET, 270 A, 60 V, 3-Pin D2PAK Infineon IRLS3036PBF

€ 8,60

€ 4,30 Katrs (Paka ir 2) (bez PVN)

€ 10,41

€ 5,203 Katrs (Paka ir 2) (Ieskaitot PVN)

N-Channel MOSFET, 270 A, 60 V, 3-Pin D2PAK Infineon IRLS3036PBF
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
2 - 8€ 4,30€ 8,60
10 - 18€ 3,70€ 7,40
20 - 38€ 3,60€ 7,20
40 - 98€ 3,50€ 7,00
100+€ 3,20€ 6,40

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

270 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

380 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

91 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

9.65mm

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

4.83mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt