Infineon HEXFET N-Channel MOSFET, 35 A, 150 V, 3-Pin TO-220AB IRFB4615PBF

RS noliktavas nr.: 688-6967Ražotājs: InfineonRažotāja kods: IRFB4615PBF
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

150 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

39 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

144 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.67mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

26 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

9.02mm

Produkta apraksts

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Noliktavas stāvoklis patreiz nav pieejams

€ 1,38

€ 0,69 Katrs (Paka ir 2) (bez PVN)

€ 1,67

€ 0,835 Katrs (Paka ir 2) (Ieskaitot PVN)

Infineon HEXFET N-Channel MOSFET, 35 A, 150 V, 3-Pin TO-220AB IRFB4615PBF

€ 1,38

€ 0,69 Katrs (Paka ir 2) (bez PVN)

€ 1,67

€ 0,835 Katrs (Paka ir 2) (Ieskaitot PVN)

Infineon HEXFET N-Channel MOSFET, 35 A, 150 V, 3-Pin TO-220AB IRFB4615PBF
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

150 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

39 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

144 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.67mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

26 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

9.02mm

Produkta apraksts

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more