Infineon SiC N-Channel MOSFET, 112 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R020CFD7XTMA1

RS noliktavas nr.: 284-741PRažotājs: InfineonRažotāja kods: IPDQ60R020CFD7XTMA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

112 A

Maximum Drain Source Voltage

600 V

Series

600V CoolMOS

Package Type

PG-HDSOP-22

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Noliktavas stāvoklis patreiz nav pieejams

€ 223,00

€ 22,30 Katrs (tiek piegadats Rulli) (bez PVN)

€ 269,83

€ 26,98 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Infineon SiC N-Channel MOSFET, 112 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R020CFD7XTMA1
Izvēlēties iepakojuma veidu

€ 223,00

€ 22,30 Katrs (tiek piegadats Rulli) (bez PVN)

€ 269,83

€ 26,98 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Infineon SiC N-Channel MOSFET, 112 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R020CFD7XTMA1
Noliktavas stāvoklis patreiz nav pieejams
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10 - 99€ 22,30
100+€ 20,60

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

112 A

Maximum Drain Source Voltage

600 V

Series

600V CoolMOS

Package Type

PG-HDSOP-22

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more