Infineon 600V CoolMOS SiC N-Channel MOSFET, 112 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R020CFD7XTMA1

RS noliktavas nr.: 284-741Ražotājs: InfineonRažotāja kods: IPDQ60R020CFD7XTMA1
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

112 A

Maximum Drain Source Voltage

600 V

Series

600V CoolMOS

Package Type

PG-HDSOP-22

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Noliktavas stāvoklis patreiz nav pieejams

€ 24,80

€ 24,80 Katrs (bez PVN)

€ 30,01

€ 30,01 Katrs (Ieskaitot PVN)

Infineon 600V CoolMOS SiC N-Channel MOSFET, 112 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R020CFD7XTMA1
Izvēlēties iepakojuma veidu

€ 24,80

€ 24,80 Katrs (bez PVN)

€ 30,01

€ 30,01 Katrs (Ieskaitot PVN)

Infineon 600V CoolMOS SiC N-Channel MOSFET, 112 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R020CFD7XTMA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

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DaudzumsVienības cena
1 - 9€ 24,80
10 - 99€ 22,30
100+€ 20,60

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

112 A

Maximum Drain Source Voltage

600 V

Series

600V CoolMOS

Package Type

PG-HDSOP-22

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more