Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
319.2 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
1950pF
Maximum Operating Temperature
+175 °C
Energy Rating
2.38mJ
Izcelsmes valsts
China
Produkta apraksts
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 3,80
Katrs (bez PVN)
€ 4,60
Katrs (Ieskaitot PVN)
1
€ 3,80
Katrs (bez PVN)
€ 4,60
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 9 | € 3,80 |
10 - 24 | € 3,60 |
25 - 49 | € 3,55 |
50 - 99 | € 3,30 |
100+ | € 3,05 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
319.2 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
1950pF
Maximum Operating Temperature
+175 °C
Energy Rating
2.38mJ
Izcelsmes valsts
China
Produkta apraksts
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.