Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC010N04LSATMA1

RS noliktavas nr.: 906-4381Ražotājs: InfineonRažotāja kods: BSC010N04LSATMA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS™ 5

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

95 nC @ 10V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Produkta apraksts

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Noliktavas stāvoklis patreiz nav pieejams

€ 19,00

€ 1,90 Katrs (Paka ir 10) (bez PVN)

€ 22,99

€ 2,299 Katrs (Paka ir 10) (Ieskaitot PVN)

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC010N04LSATMA1
Izvēlēties iepakojuma veidu

€ 19,00

€ 1,90 Katrs (Paka ir 10) (bez PVN)

€ 22,99

€ 2,299 Katrs (Paka ir 10) (Ieskaitot PVN)

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC010N04LSATMA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
10 - 40€ 1,90€ 19,00
50 - 90€ 1,80€ 18,00
100 - 240€ 1,75€ 17,50
250 - 490€ 1,65€ 16,50
500+€ 1,55€ 15,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS™ 5

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

95 nC @ 10V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Produkta apraksts

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more